HMC383LC4 v04.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz 11 Typical Applications Features The HMC383LC4 is ideal for: Gain: 15 dB • Point-to-Point Radios Saturated Output Power: +18 dBm • Point-to-Multi-Point Radios & VSAT Output IP3: +25 dBm • Test Equipment & Sensors Single Positive Supply: +5V @ 100 mA • LO Driver for HMC Mixers 50 Ohm Matched Input/Output • Military & Space RoHS Compliant 4x4 mm Package Functional Diagram General Description The HMC383LC4 is a general purpose GaAs PHEMT MMIC Driver Amplifier housed in a leadless RoHS compliant SMT package. The amplifier provides 15 dB of gain and +18 dBm of saturated power from a single +5V supply. Consistent gain and output power across the operating band make it possible to use a common driver/LO amplifier approach in multiple radio bands. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use. The HMC383LC4 is housed in a RoHS compliant leadless 4x4 mm package allowing the use of surface mount manufacturing techniques. Electrical Specifi cations, TA = +25° C, Vdd = +5V Parameter Min. Frequency Range Gain 12 Gain Variation Over Temperature Max. Min. 15 0.02 Typ. Max. Min. 16 -24 13 0.03 16 0.02 Typ. Max. Min. 24 - 28 12 0.03 15 0.02 Typ. Max. 28 - 30 10 0.03 GHz 13 0.02 Units dB 0.03 dB/ °C Input Return Loss 14 14 11 13 dB Output Return Loss 14 17 10 8 dB 15 dBm 17 16 dBm dBm Output Power for 1 dB Compression (P1dB) 12 Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) 11 - 16 Typ. 12 - 16 75 15 13.5 16.5 13 16 12 17 18 24 25 25 23 10.5 8 7.5 8 100 135 75 100 135 75 100 135 75 100 dB 135 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC383LC4 v04.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Broadband Gain & Return Loss Gain vs. Temperature 20 20 16 S21 S11 S22 0 -10 12 8 -40C 4 0 -20 8 12 16 20 24 28 12 32 14 16 Input Return Loss vs. Temperature 20 22 24 26 28 30 Output Return Loss vs. Temperature 0 0 +25C +85C -40C -5 RETURN LOSS (dB) RETURN LOSS (dB) 18 FREQUENCY (GHz) FREQUENCY (GHz) -10 -15 -20 +25C +85C -40C -5 -10 -15 -20 12 14 16 18 20 22 24 26 28 30 12 14 16 FREQUENCY (GHz) 18 20 22 24 26 28 30 26 28 30 FREQUENCY (GHz) P1dB vs. Temperature Psat vs. Temperature 22 22 20 20 18 18 16 16 14 14 Psat (dBm) P1dB (dBm) 11 +25C +85C 12 10 8 +25C +85C -40C 6 4 LINEAR & POWER AMPLIFIERS - SMT GAIN (dB) RESPONSE (dB) 10 12 +25C +85C -40C 10 8 6 4 2 2 0 0 12 14 16 18 20 22 24 FREQUENCY (GHz) 26 28 30 12 14 16 18 20 22 24 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 17 HMC383LC4 v04.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Power Compression @ 30 GHz 20 20 18 18 Pout (dBm), GAIN (dB), PAE (%) 11 Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 18 GHz 16 14 Pout (dBm) Gain (dB) PAE (%) 12 10 8 6 4 2 Pout (dBm) Gain (dB) PAE (%) 16 14 12 10 8 6 4 2 0 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 0 -14 8 -12 -10 INPUT POWER (dBm) NOISE FIGURE (dB) IP3 (dBm) 26 22 +25C +85C -40C 14 10 15 18 21 24 27 30 0 2 4 6 8 28 30 28 30 +25C +85C -40C 12 14 16 18 20 22 24 26 FREQUENCY (GHz) Gain & Power vs. Supply Voltage @ 18 GHz Reverse Isolation vs. Temperature 0 19 -10 18 ISOLATION (dB) GAIN (dB), P1dB (dBm), Psat (dBm) -2 13 12 11 10 9 8 7 6 5 4 3 2 1 0 FREQUENCY (GHz) 17 16 -20 +25C +85C -40C -30 -40 -50 15 14 4.5 Gain P1dB Psat -60 -70 5 Vdd Supply Voltage (Vdc) 11 - 18 -4 Noise Figure vs. Temperature 30 12 -6 INPUT POWER (dBm) Output IP3 vs. Temperature 18 -8 5.5 12 14 16 18 20 22 24 26 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC383LC4 v04.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +5.5 Vdc Vdd (V) Idd (mA) RF Input Power (RFIN)(Vdd = +5Vdc) +10 dBm +4.5 99 Channel Temperature 175 °C +5.0 100 +5.5 101 Continuous Pdiss (T= 85 °C) (derate 10 mW/°C above 85 °C) 0.92 W Thermal Resistance (channel to ground paddle) 98 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A Note: Amplifi er will operate over full voltage ranges shown above LINEAR & POWER AMPLIFIERS - SMT 11 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL. 3. ALL DIMENSIONS ARE IN INCHES [MM] 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 19 HMC383LC4 v04.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Pin Descriptions Pin Number Function Description 1, 2, 4-15, 17, 18, 20-24 N/C No connection required. These pins may be connected to RF/DC ground without affecting performance if using grounded coplanar wave guide transmission lines. 3 RFIN This pad is AC coupled and matched to 50 Ohms. 16 RFOUT This pad is AC coupled and matched to 50 Ohms. 19 Vdd Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1,000 pF and 2.2 μF are required. GND Package base has an exposed metal ground that must be connected to RF/DC ground. Vias under the device are required 11 Interface Schematic Application Circuit 11 - 20 Component Value C1 100 pF C2 1,000 pF C3 2.2 μF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC383LC4 v04.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Evaluation PCB List of Materials for Evaluation PCB 122198 [1] Item J1, J2 Description 2.92 mm PCB mount K-connector J3, J4 DC Pin C1 100 pF capacitor, 0402 pkg. C2 1,000 pF Capacitor, 0603 pkg. C3 2.2μF Capacitor, Tantalum U1 HMC383LC4 Amplifier PCB [2] 108535 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMT 11 11 - 21