HMC451LC3 v04.1208 11 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz Typical Applications Features The HMC451LC3 is ideal for use as a medium power amplifier for: Gain: 19 dB • Microwave Radio & VSAT Output IP3: +30 dBm • Military & Space Single Supply: +5V @ 114 mA • Test Equipment & Sensors 50 Ohm Matched Input/Output • Fiber Optics RoHS Compliant 3 x 3 mm SMT package Saturated Power: +21 dBm @ 21% PAE • LO Driver for HMC Mixers Functional Diagram General Description The HMC451LC3 is an efficient GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless RoHS compliant SMT package. Operating between 5 and 20 GHz, the amplifier provides 19 dB of gain, +21 dBm of saturated power and 21% PAE from a single +5V supply. This 50 Ohm matched amplifier does not require any external components and the RF I/O’s are DC blocked, making it an ideal linear gain block or driver for HMC SMT mixers. The HMC451LC3 allows the use of surface mount manufacturing techniques. Electrical Specifi cations, TA = +25° C, Vdd1 = Vdd2 = +5V Parameter Min. Frequency Range Gain 16 Gain Variation Over Temperature Max. Min. 19 0.015 Typ. Max. Min. 15 - 18 15 0.025 18 0.015 Typ. Max. 18 - 20 14 0.025 GHz 17 0.015 Units dB 0.025 dB/ °C Input Return Loss 13 13 12 dB Output Return Loss 12 8 8 dB 19.5 dBm 20.5 21 dBm dBm Output Power for 1 dB Compression (P1dB) 16.5 19.5 16 19 16.5 Saturated Output Power (Psat) 21 Output Third Order Intercept (IP3) 32 29 29 Noise Figure 7 6.5 7 dB 114 114 114 mA Supply Current (Idd) 11 - 126 Typ. 5 -15 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC451LC3 v04.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz Broadband Gain & Return Loss Gain vs. Temperature 24 25 20 20 10 16 S21 S11 S22 5 GAIN (dB) RESPONSE (dB) 15 0 +25C +85C -40C 12 11 8 -5 -10 4 0 -20 3 5 7 9 11 13 15 17 19 21 23 4 25 6 8 Input Return Loss vs. Temperature 14 16 18 20 22 0 +25C +85C -40C -5 RETURN LOSS (dB) RETURN LOSS (dB) 12 Output Return Loss vs. Temperature 0 -10 -15 -20 +25C +85C -40C -5 -10 -15 -20 4 6 8 10 12 14 16 18 20 22 4 6 8 FREQUENCY (GHz) 10 12 14 16 18 20 22 18 20 22 FREQUENCY (GHz) P1dB vs. Temperature Psat vs. Temperature 28 28 24 24 20 20 Psat (dBm) P1dB (dBm) 10 FREQUENCY (GHz) FREQUENCY (GHz) 16 12 +25C 8 +85C -40C 16 +25C 12 +85C -40C 8 4 LINEAR & POWER AMPLIFIERS - SMT -15 4 0 0 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 4 6 8 10 12 14 16 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 127 HMC451LC3 v04.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz Power Compression @ 20 GHz Power Compression @ 10 GHz 24 Pout (dBm), GAIN (dB), PAE (%) 11 Pout (dBm), GAIN (dB), PAE (%) 24 20 16 Pout (dBm) Gain (dB) PAE (%) 12 8 4 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 20 16 Pout (dBm) Gain (dB) PAE (%) 12 8 4 0 -20 -18 -16 -14 -12 -10 -8 6 INPUT POWER (dBm) -6 -4 -2 0 2 4 6 INPUT POWER (dBm) Output IP3 vs. Temperature Noise Figure vs. Temperature 40 11 10 36 NOISE FIGURE (dB) 9 IP3 (dBm) 32 28 24 +25C +85C -40C 20 8 7 6 5 4 3 +25C +85C -40C 2 1 16 0 4 6 8 10 12 14 16 18 20 22 4 6 8 FREQUENCY (GHz) 0 21 -10 ISOLATION (dB) GAIN (dB), P1dB (dBm), Psat (dBm) 14 16 18 20 22 20 22 Reverse Isolation vs. Temperature 22 20 19 18 Gain 17 P1dB Psat +25C +85C -40C -20 -30 -40 -50 -60 5 Vdd (Volts) 11 - 128 12 FREQUENCY (GHz) Gain, P1dB & PSAT vs. Supply Voltage @ 11 GHz 16 4.5 10 5.5 4 6 8 10 12 14 16 18 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC451LC3 v04.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd1 = Vdd2 Drain Bias Voltage (Vdd1 = Vdd2) +5.5 Vdc Vdd1 = Vdd2 (V) Idd1 = Idd2 (mA) RF Input Power (RFIN)(Vdd = +5Vdc) +10 dBm +4.5 111 Channel Temperature 175 °C +5.0 114 Continuous Pdiss (T = 85 °C) (derate 12.4 mW/°C above 85 °C) 1.1 W +5.5 116 Note: Amplifier will operate over full voltage range shown above 80 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 11 LINEAR & POWER AMPLIFIERS - SMT Thermal Resistance (channel to ground paddle) Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 129 HMC451LC3 v04.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz Pin Descriptions 11 Pin Number Function Description 1, 2, 4 - 9, 11, 12, 14, 15 N/C This pin may be connected to RF/DC ground. Performance will not be affected. 3 RFIN This pin is AC coupled and matched to 50 Ohms from 5 - 20 GHz. 10 RFOUT This pin is AC coupled and matched to 50 Ohms from 5 - 20 GHz. 13 Vdd2 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1,000 pF and 2.2 μF are required. 16 Vdd1 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1,000 pF and 2.2 μF are required. GND Package bottom must be connected to RF/DC ground. Interface Schematic Application Circuit 11 - 130 Component Value C1, C2 100 pF C3, C4 1,000 pF C5, C6 2.2 μF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC451LC3 v04.1208 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz Evaluation PCB List of Materials for Evaluation PCB 111667 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 - J5 DC Pin C1, C2 100 pF Capacitor, 0402 Pkg. C3, C4 1000 pF Capacitor, 0603 Pkg. C5, C6 2.2 μF Capacitor, Tantalum U1 HMC451LC3 Amplifier PCB [2] 111665 Evaluation PCB, 10 mils [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMT 11 11 - 131