BAS40V SCHOTTK Y DIODE SOT-563 FEATURES Low Forward Voltage Drop z Fast Switching z 1 Marking: KAN Maximum Ratings @TA=25℃ Parameter Symbol Limits Unit 40 V Non-Repetitive Peak reverse voltage VRM DC Blocking Voltage VR Average Rectified Output Current IO 200 mA Power Dissipation Pd 150 mW Thermal Resistance. Junction to Ambient Air Junction temperature Storage temperature range 833 RθJA TJ -55-125 ℃ TSTG -65-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage Forward Total leakage current voltage capacitance Reverse recovery time ℃/W unless otherwise Symbol Test V(BR) IR= 10μA IR VR=30V 200 IF=1mA 380 IF=40mA 1000 VF CT t rr conditions specified) VR=0,f=1MHz IF=10mA, IR=IF=1mA RL=100Ω MIN MAX UNIT 40 V nA mV 5 pF 5 nS 1 JinYu semiconductor www.htsemi.com Date:2011/ 05 BAS40V Typical Characteristics 2 JinYu semiconductor www.htsemi.com Date:2011/ 05