BF622 TRANSISTOR (NPN) SOT-89-3L FEATURES z Low Current z High Voltage 1. BASE 2. COLLECTOR AAPLICATIONS z Video Output Stages 3. EMITTER MARKING:DA MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current 50 mA PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA,IE=0 250 Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 250 V Emitter-base breakdown voltage V(BR)EBO IE=100µA,IC=0 5 V Collector cut-off current ICBO VCB=200V,IE=0 10 nA Emitter cut-off current IEBO VEB=5V,IC=0 50 nA DC current gain hFE VCE=20V, IC=25mA 0.6 V Collector-emitter saturation voltage Transition frequency VCE(sat) fT 50 IC=30mA,IB=5mA VCE=10V,IC=10mA, f=100MHz V 60 MHz １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５