S901 3W TRANSISTOR(NPN) SOT–323 FEATURES High Collector Current Excellent HFE Linearity MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V 1. BASE 2. EMITTER 3. COLLECTOR IC Collector Current 500 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 100 nA Collector cut-off current ICEO VCE=20V, IB=0 100 nA Emitter cut-off current IEBO VEB=5V, IC=0 100 nA DC current gain hFE VCE=1V, IC=50mA 120 400 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 1.2 V VCE=1V, IC=10mA 0.7 V Base-emitter voltage VBE Transition frequency fT Collector output capacitance Cob VCE=6V,IC=20mA , f=30MHz 150 MHz VCB=6V, IE=0, f=1MHz 8 CLASSIFICATION OF hFE RANK L H J RANGE 120–200 200–350 300–400 MARKING J3 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ pF