2SC4098 TRANSISTOR (NPN) FEATURES SOT–323 Low Collector Capacitance High Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V 1. BASE VCEO Collector-Emitter Voltage 25 V 2. EMITTER VEBO Emitter-Base Voltage 5 V 3. COLLECTOR IC Collector Current 50 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=50µA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=50µA, IC=0 5 V Collector cut-off current ICBO VCB=24V, IE=0 500 nA Emitter cut-off current IEBO VEB=3V, IC=0 500 nA DC current gain hFE VCE=6V, IC=1mA Collector-emitter saturation voltage VCE(sat) fT Transition frequency Collector output capacitance IC=10mA, IB=1mA VCE=6V,Ic=1mA ,f=100MHz Cob VCB=6V, IE=0, f=1MHz CLASSIFICATION OF hFE RANK N P Q RANGE 56–120 82–180 120–270 MARKING AN AP AQ １ JinYu semiconductor 56 www.htsemi.com 270 0.3 150 V MHz 2.2 pF