2SA1 235A TRANSISTOR(PNP) SOT–23 FEATURES Low Collector Current Low Collector Power Dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 1. BASE Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -200 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -6 V Collector cut-off current ICBO VCB=-60V, IE=0 -100 nA Emitter cut-off current IEBO VEB=-6V, IC=0 -100 nA hFE(1) VCE=-6V, IC=-1mA 150 hFE(2) VCE=-6V, IC=-0.1mA 90 DC current gain 500 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1 V fT Transition frequency Collector output capacitance Cob VCE=-6V,IC=-10mA VCB=-6V, IE=0, f=1MHz 200 MHz 4 pF CLASSIFICATION OF hFE(1) RANK M·E M·F RANGE 150–300 250–500 MARKING M·E M·F １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５