BRS33 TRANSISTOR (PNP) SOT-89-3L FEATURES z Low Voltage z High Current z Complement to BSR43 1. BASE 2. COLLECTOR AAPLICATIONS z Medium Power Transistor 3. EMITTER MARKING:BR4 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -90 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V Collector Current -1 A IC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ PC RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA,IE=0 -90 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -80 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 -5 V Collector cut-off current ICBO VCB=-60V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA DC current gain hFE(1)* VCE=-5V, IC=0.1mA 30 hFE(2)* VCE=-5V, IC=-100mA 100 hFE(3)* VCE=-5V, IC=-500mA 50 Collector-emitter saturation voltage VCE(sat)* Base-emitter saturation voltage VBE(sat)* Transition frequency fT 300 IC=-150mA,IB=-15mA -0.25 V IC=-500mA,IB=-50mA -0.5 V IC=-150mA,IB=-15mA -1 V IC=-500mA,IB=-50mA -1.2 V VCE=-10V,IC=-50mA, f=100MHz 100 MHz *Pulse test １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５