2SB1 308 TRANSISTOR SOT-89-3L 1. BASE FEATURES z Power Transistor z Excellent DC current Gain z Low Collector-emitter Saturation Voltage 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current -3 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-50µA,IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-50µA,IC=0 -6 V Collector cut-off current ICBO VCB=-20V,IE=0 -0.5 µA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.5 µA DC current gain hFE VCE=-2V, IC=-0.5A VCE(sat) IC=-1.5A,IB=-0.15A Collector-emitter saturation voltage Cob Collector output capacitance fT Transition frequency 82 390 -0.45 VCB=-20V,IE=0, f=1MHz VCE=-6V,IC=-50mA, f=30MHz 60 pF 120 MHz CLASSIFICATION OF hFE RANK P Q R RANGE 82–180 120–270 180–390 MARKING BFP BFQ BFR １ JinYu semiconductor V www.htsemi.com Ｄａｔｅ：２０１１／０５