2SB1 424 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES Excellent DC Current Gain Low Collector-emitter saturation voltage Complement the 2SD2150 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current -3 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-50µA,IE=0 -20 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-50µA,IC=0 -6 V Collector cut-off current ICBO VCB=-20V,IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 µA DC current gain hFE VCE=-2V, IC=-0.1A Collector-emitter saturation voltage Collector output capacitance VCE(sat) Cob fT Transition frequency 120 390 IC=-2A,IB=-0.1A VCB=-10V,IE=0, f=1MHz VCE=-2V,IC=-0.5A, f=100MHz -0.5 V 35 pF 240 MHz CLASSIFICATION OF hFE RANK Q R RANGE 120–270 180–390 MARKING AEQ AER １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５