MMBTA43 TRANSISTOR(NPN) SOT–23 FEATURES High Voltage Application Telephone Application Complementary to MMBTA93 1. BASE MARKING:ABX 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 350 mW Thermal Resistance From Junction To Ambient 357 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 200 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 200 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA, IC=0 5 V hFE(1)* VCE=10V, IC=10mA 40 hFE(2)* VCE=10V, IC=1mA 40 hFE(3)* VCE=10V, IC=30mA 40 Collector-emitter saturation voltage VCE(sat)* IC=20mA, IB=2mA 0.5 V Base-emitter saturation voltage VBE(sat)* IC=20mA, IB=2mA 0.9 V DC current gain Transition frequency Collector output capacitance fT Cob conditions VCE=20V,IE=10mA, f=100MHz VCB=20V, IE=0, f=1MHz Min Typ Max 50 MHz 4 *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. １ JinYu semiconductor Unit www.htsemi.com Ｄａｔｅ：２０１１／０５ pF