MMST3906 TRANSISTOR(PNP) SOT–323 FEATURES Complementary to MMST3904 MARKING:K5N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO* IC=-10µA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO* IC=-1mA, IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO* IE=-10µA, IC=0 -5 V Base cut-off current IBL* VCE=-30V, VEB(Off)=-3V -50 nA Collector cut-off current ICEX* VCE=-30V, VEB(Off)=-3V -50 nA DC current gain hFE* Collector-emitter saturation voltage VCE(sat)* Base-emitter saturation voltage VBE(sat)* Transition frequency fT VCE=-1V, IC=-100µA 60 VCE=-1V, IC=-1mA 80 VCE=-1V, IC=-10mA 100 300 IC=-10mA, IB=-1mA -0.2 V IC=-50mA, IB=-5mA -0.3 V -0.85 V -0.95 V IC=-10mA, IB=-1mA -0.65 IC=-50mA, IB=-5mA VCE=-20V,IC=-10mA , f=100MHz 250 MHz Collector output capacitance Cob VCB=-5V, IE=0, f=1MHz 4.5 pF Collector output capacitance Cib VEB=-0.5V, IE=0, f=1MHz 10 pF Delay time td VCC=-3V, VBE(off)=-0.5V, IC=-10mA, 35 ns Rise time tr IB1=-1mA 35 ns Storage time ts 225 ns Fall time tf 75 ns VCC=3V, IC=-10mA, IB1= IB2=-1mA *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５