UMD6N DIGITAL TRANSISTOR (NPN+ PNP) SOT-363 FEATURES z DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package. Transistor elements are independent, eliminating interference. z z Mounting cost and area can be cut in half. 1 External circuit MARKING:D6 Absolute maximum ratings(Ta=25℃) Parameter Symbol Limits Unit V(BR)CBO 50 V Collector-emitter voltage V(BR)CEO 50 V Emitter-base Collector-base voltage V(BR)EBO 5 V Collector current IC 100 mA Collector Power dissipation PC 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ voltage Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions Collector-base breakdown voltage V(BR)CBO 50 V IC=50μA Collector-emitter breakdown voltage V(BR)CEO 50 V IC=1mA Emitter-base breakdown voltage V(BR)EBO 5 V IE=50μA Collector cut-off current ICBO 0.5 μA VCB=50V Emitter cut-off current IEBO 0.5 μA VEB=4V VCE(sat) 0.3 V IC=5mA,IB=0.25mA Collector-emitter saturation voltage DC current transfer ratio hFE 100 Input resistance R1 3.29 Transition frequency fT 600 4.7 250 6.11 VCE=5V,IC=1mA KΩ MHz VCE=10V ,IE=-5mA,f=100MHz 1 JinYu semiconductor www.htsemi.com Date:2011/ 05