KTD1304 SOT-23 TRANSISTOR (NPN) FEATURES ·High emitter-base voltage ·low on resistance 1. BASE 2. EMITTER 3.COLLECTOR MARKING: MAX MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V IC Collector Current -Continuous 0.3 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=100μA, Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage MIN TYP MAX UNIT 25 V IC=1mA, IB=0 20 V V(BR)EBO IE=100μA, IC=0 12 V Collector cut-off current ICBO VCB=25 V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=12V, IC=0 0.1 μA hFE(FOR) VCE=2V, IC=4 mA 200 hFE(REV) VCE= 2V, IC= 4mA 20 Collector-emitter saturation voltage VCE(sat) IC= 100mA, IB=10 mA 0.25 V Base-emitter saturation voltage VBE(sat) IC= 100mA, IB=10mA 1 V IE=0 1000 DC current gain Transition frequency fT VCE=10V, IC= 1mA f=100MHz 60 MHz output capacitance Cob VCB=10V,IE=0,f=1MHz 10 pF On resistance R(on) Vin=0.3V,IB=1mA,f=1KHZ 0.6 Ω １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTD1304 Typical characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５