PNP SILICON TRANSIST OR Shantou Huashan Electronic Devices Co.,Ltd. HSBD140 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 12.5W 1―Emitter, E PC——Collector Dissipation（TA=25℃）…………………… 1.25W 2―Collector，C 3―Base，B VCBO ——Collector-Base Voltage…………………………… -80V VCEO ——Collector-Emitter Voltage………………………… -80V VEBO——Emitter-Base Voltage………………………………… -5V IC——Collector Current（Pulse）………………………………… -3A IC——Collector Current（DC）……………………………… -1.5A IB——Base Current……………………………………………-0.5A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions ICBO Collector Cut-off Current -0.1 μA VCB=-30V, IE=0 IEBO Emitter-Base Cut-off Current -10 μA VEB=-5V, IC=0 25 VCE=-2V, IC=-5mA *hFE(2) 25 VCE=-2V, IC=-0.5A *hFE(3) 40 *hFE(1) DC Current Gain 250 VCE=-2V, IC=-150mA *VCE(sat) Collector-Emitter Saturation Voltage -0.5 V Ic=-500mA, IB=-50mA *VBE(ON) Base-Emitter On Voltage -1.0 V Ic=-0.5A, VCE=-2V *VCEO(SUS) -80 Collector-Emitter Sustaining Voltage Ic=-30mA,IB=0 *Pulse Test:PW=350 μs,Duty Cycie=2% Pulsed █hFE(3) Classification Cassification hFE(3) 6 40~100 10 16 63~160 100~250 Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICON TRANSIST OR HSBD140