BG3130... DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. (NTSC, PAL) • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain • Improved cross modulation at gain reduction • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BG3130 BG3130R Drain $ # " AGC RF Input RG1 * ) G2 G1 RF Output + DC GND ! VGG ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BG3130 SOT363 1=G1* 2=G2 3=D* 4=D** 5=S 6=G1** KAs BG3130R SOT363 1=G1* 2=S 3=D* 4=D** 5=G2 6=G1** KHs * For amp. A; ** for amp. B 180° rotated tape loading orientation available 1 2007-06-01 BG3130... Maximum Ratings Parameter Symbol Drain-source voltage VDS Continuous drain current ID Gate 1/ gate 2-source current ±IG1/2SM 1 Gate 1/ gate 2-source voltage ±V G1/G2S 6 Total power dissipation Ptot 200 Storage temperature Tstg -55 ... 150 Channel temperature Tch 150 Value 8 25 Unit V mA V mW °C Thermal Resistance Parameter Symbol Value Unit Channel - soldering point1) Rthchs ≤ 280 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance 2 2007-06-01 BG3130... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DS 12 - - +V(BR)G1SS 6 - 15 +V(BR)G2SS 6 - 15 +IG1SS - - 50 µA +IG2SS - - 50 nA IDSS - - 10 µA IDSX - 10 - mA VG1S(p) - 0.7 - V VG2S(p) - 0.6 - DC Characteristics Drain-source breakdown voltage V ID = 10 µA, VG1S = 0 V, VG2S = 0 V Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 V, VDS = 0 V Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 V, VDS = 0 V Gate1-source leakage current VG1S = 6 V, VG2S = 0 V Gate2-source leakage current VG2S = 8 V, VG1S = 0 V, VDS = 0 V Drain current VDS = 5 V, VG1S = 0 V, VG2S = 4.5 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 120 kΩ Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 µA Gate2-source pinch-off voltage VDS = 5 V, I D = 20 µA 3 2007-06-01 BG3130... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics V DS = 5V, V G2S = 4V, (ID = 14 mA) (verified by random sampling) Forward transconductance gfs - 33 - mS Gate1 input capacitance Cg1ss - 1.9 - pF Cdss - 1.1 - f = 10 MHz Output capacitance f = 10 MHz Power gain Gp dB f = 800 MHz - 24 - f = 45 MHz - 31 - Noise figure dB F f = 800 MHz - 1.3 - f = 45 MHz - 1.7 - 45 - - ∆G p Gain control range VG2S = 4 ... 0 V, f = 800 MHz Cross-modulation k=1%, fw=50MHz, funw=60MHz Xmod - AGC = 0 dB 90 - - AGC = 10 dB - 87 - AGC = 40 dB 96 100 - 4 2007-06-01 BG3130... Total power dissipation Ptot = ƒ(TS) amp. A = amp. B Drain current ID = ƒ(IG1) VG2S = 4V amp. A = amp. B 300 30 mA 200 20 ID P tot mW 150 15 100 10 50 5 0 0 20 40 60 80 100 120 °C 0 0 150 10 20 30 40 50 60 70 80 µA 100 IG1 TS Output characteristics ID = ƒ(V DS) amp. A = amp. B Gate 1 current IG1 = ƒ(V G1S) VDS = 5V, VG2S = Parameter amp. A = amp. B 225 22 mA 1.3V µA 4V 18 175 1.2V 14 VG1S ID 16 1.1V 3.5V 150 125 12 3V 1V 10 100 8 75 2.5V 6 50 0.8V 4 2V 25 2 0 0 2 4 6 8 10 V 0 0 14 VDS 0.4 0.8 1.2 1.6 2 2.4 V 3.2 IG1 5 2007-06-01 BG3130... Drain current ID = ƒ(V G1S) VDS = 5V, VG2S = Parameter Gate 1 forward transconductance g fs = ƒ(ID), VDS = 5V, VG2S = Parameter amp. A = amp. B amp. A = amp. B 40 32 mS 4V µA 3V 4V 30 24 2.5V ID g fs 3.5V 25 20 3V 20 16 2V 15 12 2.5V 2V 10 8 1.5V 5 0 0 4 4 8 12 16 20 24 28 mA 0 0 36 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 ID V 2 VG1S Drain current ID = ƒ(VGG ) amp.A=amp.B Drain current ID = ƒ(VGG) VDS = 5V, VG2S = 4V, RG1 = 120kΩ VG2S = 4V, RG1 = Parameter in kΩ (connected to VGG, VGG =gate1 supply voltage) amp. A = amp. B 13 mA 22 70 mA 80 11 18 10 ID ID 100 16 9 8 7 12 6 10 5 120 14 8 4 6 3 4 2 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 0 0 5 VGG 1 2 3 4 5 V 7 VGG=VDS 6 2007-06-01 BG3130... Crossmodulation Vunw = (AGC) VDS = 5 V, Rg1 = 68 kΩ 120 V unw dBµV 100 90 80 0 10 20 30 dB 50 AGC 7 2007-06-01 BG3130... Crossmodulation test circuit VAGC VDS 4n7 R1 10kΩ 2.2 uH 4n7 4n7 RL 50Ω RGEN 50Ω 4n7 50 Ω RG1 VGG Semibiased 8 2007-06-01 Package SOT363 BG3130... Package Outline 2 ±0.2 0.9 ±0.1 +0.1 6x 0.2 -0.05 0.1 0.1 MAX. M 0.1 Pin 1 marking 1 2 3 A 1.25 ±0.1 4 0.1 MIN. 5 2.1 ±0.1 6 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 1.6 0.9 0.7 0.3 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.3 8 4 Pin 1 marking 1.1 2.15 9 2007-06-01 BG3130... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 2007-06-01