Inchange Semiconductor Product Specification 2N5629 2N5630 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6029 2N6030 APPLICATIONS ・For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) 体 半导 SYMBOL 固电 VCBO PARAMETER 2N5629 Collector-base voltage 2N5630 M E S E G N A CH Collector-emitter voltage Open base 2N5630 VEBO IN Open collector VALUE UNIT 100 V 120 100 V 120 7 V Collector current 16 A ICM Collector current-peak 20 A IB Base current 5.0 A PD Total Power Dissipation 200 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W IC Emitter-base voltage D N O IC Open emitter 2N5629 VCEO R O T UC CONDITIONS TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5629 2N5630 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS MIN 2N5629 TYP. MAX UNIT 100 IC=0.2A ;IB=0 V 120 2N5630 VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=1A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=16A ;IB=4A 2.0 V Base-emitter saturation voltage IC=10A; IB=1A 1.8 V VBE Base-emitter on voltage IC=8A ; VCE=2V 1.5 V ICBO Collector cut-off current VCB=ratedVCBO; IE=0 1.0 mA ICEO Collector cut-off current VBEsat ICEV 体 半导 固电 2N5629 VCE=50V; IB=0 Collector cut-off current IEBO Emitter cut-off current hFE-1 DC current gain IN OND VCE=ratedVCB; VBE(off)=1.5V TC=150℃ IC M E ES G N A CH 2N5629 R O T UC VCE=60V; IB=0 2N5630 VEB=7V; IC=0 1.0 mA 1.0 5.0 mA 1.0 mA 25 100 20 80 IC=8A ; VCE=2V 2N5630 hFE-2 DC current gain IC=16A ; VCE=2V COB Output capacitance IE=0 ; VCB=10V ;f=0.1MHz fT Transition frequency IC=1A ; VCE=20V 2 4 500 1.0 pF MHz Inchange Semiconductor Product Specification 2N5629 2N5630 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3