ISC 2SA2031

Inchange Semiconductor
Product Specification
2SA2031
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-3PN package
・Complement to type 2SC5669
・Wide area of safe operation
・Large current capacitance
APPLICATIONS
・For audio frequency output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-250
V
VCEO
Collector-emitter voltage
Open base
-230
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-15
A
ICM
Collector current-peak
-30
A
PC
Collectorl power dissipation
Ta=25℃
2.5
W
TC=25℃
140
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SA2031
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; RBE=∞
-230
V
V(BR)CBO
Collector-base breakdown voltage
IC=-5mA; IE=0
-250
V
V(BREBO
Emitter-base breakdown voltage
IE=-5mA; IC=0
-6
V
Collector-emitter saturation voltage
IC=-7.5 A;IB=-0.75A
VBE
Base-emitter saturation voltage
ICBO
VCEsat
CONDITIONS
MIN
TYP.
-0.3
MAX
UNIT
-2.0
V
IC=-7.5A ; VCE=-5V
-1.5
V
Collector cut-off current
VCB=-250V; IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-100
μA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
60
hFE-2
DC current gain
IC=-7.5A ; VCE=-5V
35
COB
Output capacitance
IE=0 ; VCB=-10V,f=1MHz
400
pF
fT
Transition frequency
IC=-1A ; VCE=-5V
10
MHz
0.45
μs
1.75
μs
0.25
μs
160
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=-7.5A;RL=6.67Ω
IB1=-IB2=-0.75A
VCC=-50V
Fall time
2
Inchange Semiconductor
Product Specification
2SA2031
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.1mm)
3
Inchange Semiconductor
Product Specification
2SA2031
Silicon PNP Power Transistors
4