Inchange Semiconductor Product Specification 2SC2337 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2SA1007 ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 130 V VEBO Emitter-base voltage Open collector 5 V 10 A 100 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2337 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 130 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V Collector-emitter saturation voltage IC=5A; IB=0.5A 2.5 V VBE Base-emitter on voltage IC=1A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=150V; IE=0 50 μA IEBO Emitter cut-off current VEB=5V; IC=0 50 μA hFE-1 DC current gain IC=2A ; VCE=5V 40 hFE-2 DC current gain IC=5A ; VCE=5V 20 COB Collector output capacitance IE=0; VCB=10V;f=1MHz 150 pF Transition frequency IC=1A ; VCE=10V 70 MHz VCEsat fT CONDITIONS 2 MIN TYP. MAX UNIT 320 Inchange Semiconductor Product Specification 2SC2337 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3