Inchange Semiconductor Product Specification 2SD1940 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Wide area of safe operation APPLICATIONS ·85V/6A, AF 25 to 30W output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 85 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 6 A ICM Collector current-peak 10 A PC Collector dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1940 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞ 85 V V(BR)CBO Collector-base breakdown voltage IC=5mA ;IE=0 100 V V(BR)EBO Emitter-base breakdown voltage IE=5mA ;IC=0 6 V Collector-emitter saturation voltage IC=4A ;IB=0.4A 2.0 V VBE Base-emitter on voltage IC=1A;VCE=5V 1.5 V ICBO Collector cut-off current VCB=40V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 60 hFE-2 DC current gain IC=3A ; VCE=5V 20 Transition frequency IC=1A ; VCE=5V 15 MHz Collector output capacitance f=1MHz;VCB=10V 110 pF 0.28 μs 3.60 μs 0.50 μs VCEsat fT COB CONDITIONS MIN TYP. MAX UNIT 320 Switching times ton Turn-on time ts Storage time tf Fall time IC=0.5A; IB1=-IB2=50mA VCC=20V ,RL=40Ω hFE-1 Classifications D E F 60-120 100-200 160-320 2 Inchange Semiconductor Product Specification 2SD1940 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SD1940 Silicon NPN Power Transistors 4