Inchange Semiconductor Product Specification 2SD612 2SD612K Silicon NPN Power Transistors · DESCRIPTION ·With TO-126 package ·Complement to type 2SB632/632K ·High collector dissipation ·Wide area of safe operation APPLICATIONS ·25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SD612 VCBO Collector-base voltage 25 Open base 2SD612K VEBO Emitter-base voltage IC V 35 2SD612 Collector-emitter voltage UNIT 25 Open emitter 2SD612K VCEO VALUE V 35 Open collector 5 V Collector current (DC) 2 A ICM Collector current-peak 3 A PD Total power dissipation Ta=25℃ 1 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD612 2SD612K Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO PARAMETER CONDITIONS 2SD612 Collector-emitter breakdown voltage MIN TYP. MAX 25 IC=1mA; RBE=∞ V 35 2SD612K 2SD612 Collector-base breakdown voltage UNIT 25 IC=10μA ;IE=0 2SD612K V 35 Emitter-base breakdown voltage IE=10μA ;IC=0 VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=0.15A 0.3 0.8 V VBEsat Base-emitter saturation voltage IC=1.5A ;IB=0.15A 1.1 1.5 V ICBO Collector cut-off current VCB=20V; IE=0 1 μA IEBO Emitter cut-off current VEB=4V; IC=0 1 μA hFE-1 DC current gain IC=0.5A ; VCE=2V 60 hFE-2 DC current gain IC=1.5A ; VCE=2V 30 Transition frequency IC=50mA ; VCE=10V 100 MHz Collector output capacitance f=1MHz ; VCB=10V 30 pF 0.05 μs 0.10 μs 0.40 μs V(BR)EBO fT COB 5 V 320 Switching times ton Turn-on time tf Fall time tstg IC=500mA ; VCE=12V IB1=-IB2=50mA Storage time hFE-1 Classifications D E F 60-120 100-200 160-320 2 Inchange Semiconductor Product Specification 2SD612 2SD612K Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SD612 2SD612K Silicon NPN Power Transistors 4