Inchange Semiconductor Product Specification 2SA1673 Silicon PNP Power Transistors · DESCRIPTION ·With TO-3PML package ·Complement to type 2SC4388 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -180 V VCEO Collector-emitter voltage Open base -180 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -15 A IB Base current -4 A PC Collectorl power dissipation 85 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ B TC=25℃ Inchange Semiconductor Product Specification 2SA1673 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-5 A;IB=-0.5 A -2.0 V ICBO Collector cut-off current VCB=-180V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 μA hFE DC current gain IC=-3A ; VCE=-4V fT Transition frequency IC=-0.5A ; VCE=-12V 20 MHz COB Output capacitance IE=0; VCB=-10V;f=1MHz 500 pF 0.60 μs 0.90 μs 0.20 μs -180 UNIT V B 50 180 Switching times ton Turn-on time ts Storage time tf Fall time IC=-10A;RL=4Ω IB1=-IB2=-1A VCC=-40V hFE classifications O P Y 50-100 70-140 90-180 2 Inchange Semiconductor Product Specification 2SA1673 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SA1673 Silicon PNP Power Transistors 4