ISC 2SA1673

Inchange Semiconductor
Product Specification
2SA1673
Silicon PNP Power Transistors
·
DESCRIPTION
·With TO-3PML package
·Complement to type 2SC4388
APPLICATIONS
·Audio and general purpose
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-180
V
VCEO
Collector-emitter voltage
Open base
-180
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-15
A
IB
Base current
-4
A
PC
Collectorl power dissipation
85
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
B
TC=25℃
Inchange Semiconductor
Product Specification
2SA1673
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-5 A;IB=-0.5 A
-2.0
V
ICBO
Collector cut-off current
VCB=-180V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-10
μA
hFE
DC current gain
IC=-3A ; VCE=-4V
fT
Transition frequency
IC=-0.5A ; VCE=-12V
20
MHz
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
500
pF
0.60
μs
0.90
μs
0.20
μs
-180
UNIT
V
B
50
180
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-10A;RL=4Ω
IB1=-IB2=-1A
VCC=-40V
hFE classifications
O
P
Y
50-100
70-140
90-180
2
Inchange Semiconductor
Product Specification
2SA1673
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SA1673
Silicon PNP Power Transistors
4