isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1454 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max)@ (IC= -3A, IB= -0.3A) ·Complement to Type 2SD2202 B APPLICATIONS ·Designed for high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -90 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A ICM Collector Current-Pulse -9 A Collector Power Dissipation @Ta=25℃ 2 PC W Collector Power Dissipation @TC=25℃ 25 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1454 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ -80 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -90 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -0.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -100 μA hFE-1 DC Current Gain IC= -1A; VCE= -2V 70 hFE-2 DC Current Gain IC= -3A; VCE= -2V 30 Current-Gain—Bandwidth Product IC= -1A; VCE= -5V fT CONDITIONS MIN TYP. B MAX UNIT 280 20 MHz 0.2 μs 0.7 μs 0.2 μs Switching Times ton Turn-on Time tstg Storage Time tf VCC= -50V, RL= 25Ω, IC= -2A;IB1= -IB2= -0.2A, Fall Time hFE-1 Classifications Q R S 70-140 100-200 140-280 isc Website：www.iscsemi.cn 2