isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1707 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage: VCE(sat)= 0.5V(Max.)@ IC= 8A ·Complement to Type 2SB1156 APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICP Collector Current-Pulse 30 A Collector Power Dissipation @ TC=25℃ 100 PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 3 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1707 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.4A 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A 1.5 V VBE(sat)-1 Base -Emitter Saturation Voltage IC= 8A; IB= 0.4A 1.5 V VBE(sat)-2 Base -Emitter Saturation Voltage IC= 20A; IB= 2A 2.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 μA hFE-1 DC Current Gain IC= 0.1A; VCE= 2V 45 hFE-2 DC Current Gain IC= 3A; VCE= 2V 60 hFE-3 DC Current Gain IC= 10A; VCE= 2V 30 Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V fT CONDITIONS MIN TYP. MAX 80 UNIT V B B 260 20 MHz 0.5 μs 2.0 μs 0.2 μs Switching Times ton Turn-on Time tstg Storage Time tf IC= 8A, IB1= -IB2= 0.8A Fall Time hFE-2Classifications R Q P 60-120 90-180 130-260 isc Website：www.iscsemi.cn 2