ISC 2SD1707

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SD1707
DESCRIPTION
·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min)
·Good Linearity of hFE
·Low Collector Saturation Voltage: VCE(sat)= 0.5V(Max.)@ IC= 8A
·Complement to Type 2SB1156
APPLICATIONS
·Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
130
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
20
A
ICP
Collector Current-Pulse
30
A
Collector Power Dissipation
@ TC=25℃
100
PC
W
Collector Power Dissipation
@ Ta=25℃
TJ
Tstg
Junction Temperature
Storage Temperature Range
isc Website:www.iscsemi.cn
3
150
℃
-55~150
℃
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SD1707
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA; IB= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 8A; IB= 0.4A
0.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 20A; IB= 2A
1.5
V
VBE(sat)-1
Base -Emitter Saturation Voltage
IC= 8A; IB= 0.4A
1.5
V
VBE(sat)-2
Base -Emitter Saturation Voltage
IC= 20A; IB= 2A
2.5
V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
50
μA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 2V
45
hFE-2
DC Current Gain
IC= 3A; VCE= 2V
60
hFE-3
DC Current Gain
IC= 10A; VCE= 2V
30
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
fT
CONDITIONS
MIN
TYP.
MAX
80
UNIT
V
B
B
260
20
MHz
0.5
μs
2.0
μs
0.2
μs
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
‹
IC= 8A, IB1= -IB2= 0.8A
Fall Time
hFE-2Classifications
R
Q
P
60-120
90-180
130-260
isc Website:www.iscsemi.cn
2