isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD600 DESCRIPTION ·High Collector Current-IC= 1.0A ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SB631 APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICP Collector Current-Pulse 2 A Collector Power Dissipation @ TC=25℃ 8 W PC Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 1 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD600 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 100 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ 100 V V(BR)EBO Emitter-Base Breakdown Vltage IE= 10μA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA 0.4 V VBE(sat) Base-Emitter Saturation Voltage IC= 500mA; IB= 50mA 1.2 V ICBO Collector Cutoff Current VCB= 50V; IE= 0 1 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1 μA hFE-1 DC Current Gain IC= 50mA ; VCE= 5V 60 hFE-2 DC Current Gain IC= 500mA ; VCE= 5V 20 Current-Gain—Bandwidth Product IC= 50mA ; VCE= 10V 130 MHz Output Capacitance IE= 0; VCB= 10V,ftest= 1MHz 20 pF 0.1 μs 0.5 μs 0.7 μs fT COB 320 Switching times tf Fall Time toff Turn-Off Time tstg Storage Time IC= 500mA ,RL=24Ω, IB1= -IB2= 50m A,VCE= 12V hFE-1 Classifications D E F 60-120 100-200 160-320 isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Website：www.iscsemi.cn isc Product Specification 2SD600