isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB994 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min) ·Collector Power Dissipation: PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max)@ IC= -3A ·Complement to Type 2SD1354 APPLICATIONS ·Designed for audio frequency power amplifier applications. SYMBOL ww PARAMETER w VALUE UNIT -60 V -60 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A IB Base Current-Continuous -0.5 A Collector Power Dissipation @Ta=25℃ 1.5 Collector Power Dissipation @TC=25℃ 30 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ PC isc Website：www.iscsemi.cn n c . i m e s c s .i ABSOLUTE MAXIMUM RATINGS(Ta=25℃) W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB994 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -1.0 V VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -5V -1.0 V ICBO Collector Cutoff Current VCB= -60V; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -100 μA hFE-1 DC Current Gain IC= -0.5A; VCE= -5V hFE-2 DC Current Gain COB Output Capacitance fT ton Turn-on Time tstg Storage Time tf IE= 0; VCB= -10V; ftest= 1MHz IC= -0.5A; VCE= -5V VCC= -30V, RL= 15Ω, IB1= -IB2= -0.2A, Fall Time hFE-1 Classifications O Y 60-120 100-200 isc Website：www.iscsemi.cn TYP. 2 MAX -60 n c . i m e s c s .i ww w MIN UNIT V B IC= -3A; VCE= -5V Current-Gain—Bandwidth Product Switching Times CONDITIONS 60 200 20 150 pF 9 MHz 0.4 μs 1.7 μs 0.5 μs