isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB943 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max)@IC= -2A ·Good Linearity of hFE ·Complement to Type 2SD1268 APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -6 A Collector Power Dissipation @ Ta=25℃ 2 PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 30 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB943 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.1A -0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.1A -1.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -0.1A; VCE= -2V 45 hFE-2 DC Current Gain IC= -0.5A; VCE= -2V 90 Current-Gain—Bandwidth Product IC=-0.5A; VCE= -10V; ftest=10MHz fT CONDITIONS MIN TYP. MAX -80 UNIT V B B 260 30 MHz 0.3 μs 1.1 μs 0.3 μs Switching times ton Turn-on Time tstg Storage Time tf IC= -0.5A, IB1= -IB2= -50mA Fall Time hFE-1 Classifications Q P 90-180 130-260 isc Website：www.iscsemi.cn 2