isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2065 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1372 APPLICATIONS ·Designed for high power amplifications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s .i VALUE w w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO UNIT 140 V 140 V Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICP Collector Current-Pulse 12 A Collector Power Dissipation @ TC=25℃ 80 PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 3 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2065 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(on) MAX UNIT IC= 5A; IB= 0.5A 2.0 V Base -Emitter On Voltage IC= 5A; VCE= 5V 1.8 V ICBO Collector Cutoff Current VCB= 140V; IE= 0 50 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 50 μA hFE-1 DC Current Gain IC= 20mA; VCE= 5V hFE-2 DC Current Gain IC= 1A; VCE= 5V hFE-3 DC Current Gain fT COB w Q S 60-120 80-160 60 200 20 IC= 0.5A; VCE= 5 V; f= 1MHz 20 MHz IE= 0; VCB= 10V; f= 1MHz 110 pF P 100-200 isc Website：www.iscsemi.cn TYP. 20 n c . i m e s c s .i ww Output Capacitance MIN B IC= 5A; VCE= 5V Current-Gain—Bandwidth Product hFE-2Classifications CONDITIONS 2