Inchange Semiconductor Product Specification 2SC2266 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High dielectric strength ·Short switching time APPLICATIONS ·For switching regulator application PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A IB Base current 3 A PT Total power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 1.25 ℃/W Tmb≤25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification 2SC2266 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=8A; IB=1.6A 1.0 V VBEsat Base-emitter saturation voltage IC=8A; IB=1.6A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=1.6A ; VCE=5V 10 hFE-2 DC current gain IC=8A ; VCE=5V 8 2 MIN TYP. MAX 50 UNIT Inchange Semiconductor Product Specification 2SC2266 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3