Inchange Semiconductor Product Specification BUW24 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High dielectric strength ・Short switching time APPLICATIONS ・Suitable for use in clocked voltatge converters PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 MAXIMUN RATINGS SYMBOL CONDITIONS UNIT 450 V 350 V 7 V Collector current 10 A Base current 3 A 100 W VCBO Collector-base voltage VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector IC IB TOR VALUE 固 PARAMETER Open emitter EMIC S E G AN INCH C U D ON Tmb≤25℃ PT Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 1.25 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification BUW24 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO Collector-emitter breakdown voltage IC=10mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 0.8 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=450V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 10 hFE-2 DC current gain IC=4A ; VCE=5V 15 导体 半 电 CONDITIONS MIN 固 Storage time tf Fall time IN G N A CH IC M E ES IC=5A IB1=- IB2=0.5A RL=10Ω 2 UNIT V 80 R O T UC OND Turn-on time ts MAX 350 Switching times ton TYP. 2.0 μs 4.0 μs 1.2 μs Inchange Semiconductor Product Specification BUW24 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3