ISC 2SC2616

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SC2616
DESCRIPTION
·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min)
·High Switching Speed
APPLICATIONS
·Designed for high voltage, high speed and high power
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
5
A
PC
Collector Power Dissipation
@TC=25℃
100
W
Tj
Junction Temperature
150
℃
-55~150
℃
B
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SC2616
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustainig Voltage
IC= 0.2A; RBE= ∞; L= 100mH
400
V
VCEX(SUS)
Collector-Emitter Sustainig Voltage
IC= 5A; IB1=-IB2= 1A,
VBE= -5V; L=180μH,clamped
400
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A; IB= 1A
1.2
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
1.7
V
hFE-1
DC Current Gain
IC= 5A; VCE= 5V
15
hFE-2
DC Current Gain
IC= 10A; VCE= 5V
7
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
0.1
mA
ICEO
Collector Cutoff Current
VCE= 350V; RBE= ∞
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
0.1
mA
1.0
μs
2.5
μs
1.0
μs
B
B
Switching Times
tr
tstg
tf
Rise Time
Storage Time
Fall Time
isc Website:www.iscsemi.cn
IC= 10A; IB1= -IB2= 2A,
VCC≈ 150V