Inchange Semiconductor Product Specification 2SC3318 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A IB Base current 3 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 1.55 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth (j-c) PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification 2SC3318 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=5A ; VCE=5V 0.5 μs 1.5 μs 0.15 μs 10 Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=5.0A IB1=1A IB2=-2A RL=30ohm PW=20μs Duty=<2% 2 Inchange Semiconductor Product Specification 2SC3318 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC3318 Silicon NPN Power Transistors 4