ISC 2SC2830

Inchange Semiconductor
Product Specification
2SC2830
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・High voltage ,high speed
・Wide area of safe operation
APPLICATIONS
・For switching regulator applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
20
A
200
W
IC
Collector current
PT
Total power dissipation
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.0
℃/W
Tmb=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
Thermal resistance from junction to mounting base
Inchange Semiconductor
Product Specification
2SC2830
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=12A; IB=2.4A
1.2
V
VBEsat
Base-emitter saturation voltage
IC=12A; IB=2.4A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
0.1
mA
ICEO
Collector cut-off current
VCE=400V; IB=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE-1
DC current gain
IC=2.4A ; VCE=5V
15
hFE-2
DC current gain
IC=12A ; VCE=5V
10
2
MIN
TYP.
MAX
400
UNIT
V
50
Inchange Semiconductor
Product Specification
2SC2830
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3