ISC 2N3879

Inchange Semiconductor
Product Specification
2N3879
Silicon NPN Power Transistors
DESCRIPTION
·With TO-66 package
·Wide area of safe operation
·High sustaining voltage
APPLICATIONS
·For high-speed switching and linearamplifier applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO(SUS)
VEBO
PARAMETER
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
120
V
Collector-emitter sustaining voltage
Open base
75
V
Emitter-base voltage
Open collector
7
V
IC
Collector current
7
A
ICM
Collector current-Peak
10
A
IB
Base current
5
A
PT
Total power dissipation
35
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
MAX
UNIT
5.0
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N3879
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=4A; IB=0.4A
1.2
V
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.4A
2.0
V
ICEV
Collector cut-off current
VCE=120V;VBE(off)=1.5V
VCE=100V;VBE(off)=1.5V TC=150℃
0.5
4.0
mA
ICEO
Collector cut-off current
VCE=40V; IB=0
5.0
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1.0
mA
hFE-1
DC current gain
IC=4A ; VCE=2V
12
100
hFE-2
DC current gain
IC=4A ; VCE=5V
20
80
hFE-3
DC current gain
IC=0.5A ; VCE=5V
40
COB
Collector output capacitance
IE=0 ; VCB=10V; f=1MHz
2
MIN
TYP.
MAX
75
UNIT
V
175
pF
Inchange Semiconductor
Product Specification
2N3879
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3