Inchange Semiconductor Product Specification 2N3879 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Wide area of safe operation ·High sustaining voltage APPLICATIONS ·For high-speed switching and linearamplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO(SUS) VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 120 V Collector-emitter sustaining voltage Open base 75 V Emitter-base voltage Open collector 7 V IC Collector current 7 A ICM Collector current-Peak 10 A IB Base current 5 A PT Total power dissipation 35 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 5.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N3879 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A 1.2 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.4A 2.0 V ICEV Collector cut-off current VCE=120V;VBE(off)=1.5V VCE=100V;VBE(off)=1.5V TC=150℃ 0.5 4.0 mA ICEO Collector cut-off current VCE=40V; IB=0 5.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE-1 DC current gain IC=4A ; VCE=2V 12 100 hFE-2 DC current gain IC=4A ; VCE=5V 20 80 hFE-3 DC current gain IC=0.5A ; VCE=5V 40 COB Collector output capacitance IE=0 ; VCB=10V; f=1MHz 2 MIN TYP. MAX 75 UNIT V 175 pF Inchange Semiconductor Product Specification 2N3879 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3