Inchange Semiconductor Product Specification 2SB1568 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2399 ・High DC current gain. ・Low saturation voltage. ・DARLINGTON APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -4 A ICM Collector current-peak -6 A PC Collector dissipation TC=25℃ 30 W 2 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1568 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-50μA; IE=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA; IC=0 -7 V Collector-emitter saturation voltage IC=-2A ; IB=-4mA ICBO Collector cut-off current IEBO VCEsat CONDITIONS MIN TYP. UNIT -3.0 V VCB=-80V;IE=0 -100 μA Emitter cut-off current VEB=-5V;IC=0 -3.0 mA hFE DC current gain IC=-2A ; VCE=-3V COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 35 pF fT Transition frequency IC=-0.5A ; VCE=-5V;f=10MHz 12 MHz 2 -1.0 MAX 1000 10000 Inchange Semiconductor Product Specification 2SB1568 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3