Inchange Semiconductor Product Specification 2SC1819M Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High VCEO ·Large PC APPLICATIONS ·For use in line-operated color TV chroma output circuits. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 0.1 A ICM Collector current-peak 0.2 A PC Collector power dissipation 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1819M Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=100μA ;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage IC=100A ;IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=100μA ;IC=0 7 V Collector-emitter saturation voltage IC=50mA ;IB=5mA 1.5 V VBE Base-emitter on voltage IC=30mA ; VCE=10V 1.2 V hFE-1 DC current gain IC=5mA ; VCE=50V 50 hFE-2 DC current gain IC=30mA ; VCE=10V 30 COB Output capacitance IE=0; VCB=30V;f=1MHz fT Transition frequency IC=20mA ; VCE=30V VCEsat 2 250 5 70 pF MHz Inchange Semiconductor Product Specification 2SC1819M Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3