ISC 2SC1819M

Inchange Semiconductor
Product Specification
2SC1819M
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·High VCEO
·Large PC
APPLICATIONS
·For use in line-operated color TV chroma
output circuits.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
0.1
A
ICM
Collector current-peak
0.2
A
PC
Collector power dissipation
15
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1819M
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=100μA ;IE=0
300
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=100A ;IB=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=100μA ;IC=0
7
V
Collector-emitter saturation voltage
IC=50mA ;IB=5mA
1.5
V
VBE
Base-emitter on voltage
IC=30mA ; VCE=10V
1.2
V
hFE-1
DC current gain
IC=5mA ; VCE=50V
50
hFE-2
DC current gain
IC=30mA ; VCE=10V
30
COB
Output capacitance
IE=0; VCB=30V;f=1MHz
fT
Transition frequency
IC=20mA ; VCE=30V
VCEsat
2
250
5
70
pF
MHz
Inchange Semiconductor
Product Specification
2SC1819M
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3