isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3122 DESCRIPTION ·High Gain: Gpe= 24dB TYP. @ f= 200MHz ·Low Noise: NF= 2.0dB TYP. @ f= 200MHz APPLICATIONS ·Designed for TV VHF RF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 20 mA IB Base Current-Continuous 10 mA PC Collector Power Dissipation @TC=25℃ 0.15 W TJ Junction Temperature 125 ℃ -55~125 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3122 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 ICBO Collector Cutoff Current VCB= 25V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 2V; IC= 0 0.1 μA hFE DC Current Gain IC= 2mA ; VCE= 10V Cre Feed-Back Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz Current-Gain—Bandwidth Product IC= 2mA ; VCE= 10V fT Gpe CONDITIONS Power Gain MIN TYP. MAX 30 UNIT V 60 300 0.3 0.45 pF 400 650 MHz 20 24 28 dB 2.0 3.2 dB VCE= 12V; VAGC= 1.4V;f= 200MHz NF Noise Figure isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC3122 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn 2SC3122 4