isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4250 DESCRIPTION ·High Conversion GainGce = 25 dB TYP. ·Low Reverse Transfer CapacitanceCre = 0.45 pF TYP. APPLICATIONS ·Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA IB Base Current-Continuous 25 mA PC Collector Power Dissipation @TC=25℃ 0.1 W TJ Junction Temperature 125 ℃ -55~125 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4250 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 25V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 1.0 μA Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 20 DC Current Gain IC= 5mA ; VCE= 10V 40 Current-Gain—Bandwidth Product IC= 5mA;VCE= 10V 900 Cre Reverse Transfer Capacitance IE= 0 ; VCB= 10V; f= 1MHz Gce Conversion Gain V(BR)CEO hFE fT V 300 1400 0.45 20 MHz 0.6 25 pF dB VCC= 12V; f= 200MHz fL= 260MHz NF Noise Figure isc Website：www.iscsemi.cn 4.3 2 6 dB INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC4250 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn 2SC4250 4