isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4308 DESCRIPTION ·Low Noise ·High Gain Bandwidth Product APPLICATIONS ·Designed for use in VHF wide band amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 300 mA ICM Collector Current-Peak 500 mA PC Collector Power Dissipation @TC=25℃ 0.6 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4308 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 100μA ; IE= 0 30 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ 20 V ICBO Collector Cutoff Current VCB= 25V; IE= 0 1 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 10 μA hFE DC Current Gain IC= 50mA ; VCE= 5V 50 Current-Gain—Bandwidth Product IC= 50mA ; VCE= 5V 1.5 Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz fT COB isc Website：www.iscsemi.cn 2 200 2.5 GHz 4.0 pF INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC4308