isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4265 DESCRIPTION ·Low Noise ·High Gain APPLICATIONS ·Designed for use in VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25℃ 0.1 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4265 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 30 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ 20 V ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.5 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 10 μA Collector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA 1.0 V DC Current Gain IC= 10mA ; VCE= 10V 40 Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V 600 Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz VCE(sat) hFE fT COB isc Website：www.iscsemi.cn 2 MHz 1.5 pF INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC4265 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn 2SC4265 4