isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4264 DESCRIPTION ·Low Noise ·High Gain APPLICATIONS ·Designed for use in UHF ~VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 11 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25℃ 0.1 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4264 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.5 μA ICEO Collector Cutoff Current VCE= 11V; RBE= ∞ 10 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 1.0 μA Collector-Emitter Saturation Voltage IC= 10mA ; IB= 5mA 0.7 V DC Current Gain IC= 5mA ; VCE= 10V 20 Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V 1.4 Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz V(BR)CBO VCE(sat) hFE fT COB isc Website：www.iscsemi.cn 2 20 V GHz 1.5 pF INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC4264 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn 2SC4264 4