isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4247 DESCRIPTION ·High Current-Gain Bandwidth Product fT= 4 GHz TYP. @VCE = 10 V, IC = 10 mA ·Low Noise APPLICATIONS ·Designed for TV tuner , UHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 30 mA IB Base Current-Continuous 15 mA PC Collector Power Dissipation @TC=25℃ 0.1 W TJ Junction Temperature 125 ℃ -55~125 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4247 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 2V; IC= 0 1.0 μA Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 12 DC Current Gain IC= 5mA ; VCE= 10V 35 Current-Gain—Bandwidth Product IC= 10mA;VCE= 10V; f= 1000MHz 2.6 COB Output Capacitance IE= 0 ; VCB= 10V; f= 1MHz 1.05 1.35 pF rbb’ • CC Base Time Constant IC= 5mA ; VCB= 10V;f= 30MHz 4.5 9 ps V(BR)CEO hFE fT isc Website：www.iscsemi.cn 2 V 130 4 GHz INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC4247 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn 2SC4247 4