isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3565 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage APPLICATIONS ·Designed for use in high frequency high voltage amplifier and TV viedo output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 0.2 A PC Collector Power Dissipation @ TC=25℃ 15 W TJ Junction Temperature 150 ℃ -40~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3565 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 300 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ 300 V V(BR)EBO Emitter-Base Breakdown Vltage IE= 10μA ; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA; IB= 2mA 1.5 V ICEO Collector Cutoff Current VCE= 250V; RBE= ∞ 1 μA hFE DC Current Gain IC= 10mA; VCE= 10V Current-Gain—Bandwidth Product IC= 10mA; VCE= 20V fT isc Website：www.iscsemi.cn 2 30 200 80 MHz