isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB634 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·High Power Dissipation APPLICATIONS ·Designed for low frequency power amplifier applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s .i PARAMETER w w w VALUE UNIT -120 V -120 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -10 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB634 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 -120 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞ -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -1.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -0.1 mA hFE-1 DC Current Gain hFE-2 DC Current Gain fT PARAMETER w w hFE-1 Classifications D 40-80 60-120 n c . i m e s c s i . w Current-Gain—Bandwidth Product C B E F 100-200 160-320 isc Website：www.iscsemi.cn IC= -1A; VCE= -5V 40 IC= -3A; VCE= -5V 20 IC= -1A; VCE= -5V 2 320 15 MHz