isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 4A ·High DC Current Gain : hFE= 1000(Min) @ IC= 4A, VCE= 3V APPLICATIONS ·Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT 120 V 120 V 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 12 A Collector Power Dissipation @ TC=25℃ 25 W PC Collector Power Dissipation @ Ta=25℃ TJ Tstg n c . i m e Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 2 150 ℃ -55~150 ℃ 2SD2104 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2104 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞ 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 8mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 4A; IB= 8mA 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 8A; IB= 80mA 3.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA ICEO Collector Cutoff Current VCE= 100V; RBE= ∞ 10 μA hFE DC Current Gain B B n c . i m e B s c s i . w w w isc Website：www.iscsemi.cn MIN B IC= 4A; VCE= 3V 2 1000 TYP. MAX 20000 UNIT