isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA900 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -18V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SC1568 APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -18 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICP Collector Current-Pulse -2 A PC Collector Power Dissipation 1.2 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA900 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 -18 V V(BR)CBO Collector-Base Breakdown Voltage IC= -10μA; IE= 0 -20 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -50mA -0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -1.2 V ICBO Collector Cutoff Current VCB= -10V; IE= 0 -1 μA ICEO Collector Cutoff Current VCE= -18V; IB= 0 -10 μA hFE-1 DC Current Gain IC= -0.5A; VCE= -2V 90 hFE-2 DC Current Gain IC= -1.5A ; VCE= -2V 50 Current-Gain—Bandwidth Product IC= -50mA; VCE= -6V 200 MHz Output Capacitance IE=0; VCB= -6V, ftest= 1MHz 40 pF fT COB CONDITIONS hFE-1 Classifications Q R S T U 90-155 130-210 180-280 250-360 330-470 isc Website：www.iscsemi.cn 2 MIN TYP. MAX UNIT 470