isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1531 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 40V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage APPLICATIONS ·Designed for AF output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICP Collector Current-Peak 4 A Collector Power Dissipation @ TC=25℃ 5 PC TJ Tstg W Collector Power Dissipation @ Ta=25℃ 1.2 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1531 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 50 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2mA; IB= 0 40 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.5 V ICBO Collector Cutoff Current VCB= 50V; IE= 0 1.0 μA ICEO Collector Cutoff Current VCE= 10V; IB= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE DC Current Gain IC= 1A; VCE= 5V Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V 150 MHz Collector Output Capacitance IE= 0; VCB= 20V; f= 1MHz 20 pF fT COB PARAMETER B B B B hFE Classifications P Q R 50-100 80-160 120-220 isc Website：www.iscsemi.cn 2 50 220