isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3512 DESCRIPTION ·Low Noise and High Gain NF = 1.6 dB TYP. @f = 900 MHz PG = 10.5 dB TYP. @f = 900 MHz APPLICATIONS ·Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 11 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25℃ 0.6 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3512 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 ICBO Collector Cutoff Current VCB= 12V; IE= 0 1.0 μA ICEO Collector Cutoff Current VCE= 10V; RBE= ∞ 1.0 μA IEBO Emitter Cutoff Current VEB= 1V; IC= 0 1.0 μA hFE DC Current Gain IC= 20mA ; VCE= 5V Current-Gain—Bandwidth Product IC= 20mA ; VCE= 5V 6.0 COB Output Capacitance IE= 0 ; VCB= 5V;f= 1.0MHz 1.2 PG Power Gain IC= 20mA; VCE= 5V; f= 900MHz 10.5 dB NF Noise Figure IC= 5mA ; VCE= 5V; f= 900MHz 1.6 dB fT isc Website：www.iscsemi.cn CONDITIONS 2 MIN TYP. MAX 15 UNIT V 50 250 GHz 1.6 pF INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC3512