isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2408 DESCRIPTION ·Low Noise NF = 2.4 dB TYP. ;@ f = 200 MHz ·High Gain ︱S21e︱2 = 21 dB TYP. ;@ f = 200 MHz APPLICATIONS ·Designed for use in high frequency wide band amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 150 mA PC Collector Power Dissipation @TC=25℃ 0.6 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2408 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 20V; IE= 0 0.5 μA IEBO Emitter Cutoff Current VEB= 2V; IC= 0 0.5 μA hFE DC Current Gain IC= 50mA ; VCE= 10V Current-Gain—Bandwidth Product IC= 50mA ; VCE= 10V 3.5 COB Output Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 1.25 ︱S21e︱2 Insertion Power Gain IC= 50mA ; VCE= 10V; f= 200MHz; RG = 50Ω Noise Figure IC= 30mA ; VCE= 10V; f= 200MHz; RG = 50Ω fT NF isc Website：www.iscsemi.cn 2 30 18 200 GHz 2.0 21 2.4 pF dB 4.0 dB