isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2351 DESCRIPTION ·Low Noise NF = 1.5 dB TYP. ; @ f = 1 GHz ·High Maximum Available Gain MAG = 14 dB TYP. ; @ f = 1 GHz APPLICATIONS ·Designed for use as UHF oscillators and a UHF mixer in a tuner of a TV receiver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 70 mA PC Collector Power Dissipation @TC=25℃ 0.25 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2351 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 2.0V; IC= 0 0.1 μA hFE DC Current Gain IC= 20mA ; VCE= 10V Current-Gain—Bandwidth Product IC= 20mA;VCE= 10V 4.5 COB Output Capacitance IE= 0 ; VCB= 10V; f= 1MHz 0.75 ︱S21e︱2 Insertion Power Gain IC= 20mA ; VCE= 10V;f= 1.0GHz Noise Figure IC= 5mA ; VCE= 10V;f= 1.0GHz 1.5 Maximum Available Gain IC= 20mA ; VCE= 10V;f= 1.0GHz 14 fT NF MAG hFE Classification Class E/P F/Q Marking R2 R3 hFE 40-120 100-200 isc Website：www.iscsemi.cn 2 40 9 200 GHz 1.0 11 pF dB 3.0 dB dB INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC2351